Quantum engineering of non-equilibrium efficient p-doping in ultra-wide band-gap nitrides
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چکیده
منابع مشابه
Corrigendum: Impurity Resonant States p-type Doping in Wide-Band-Gap Nitrides
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In this work, a new strategy for achieving efficient p-type doping in high bandgap nitride semiconductors to overcome the fundamental issue of high activation energy has been proposed and investigated theoretically, and demonstrated experimentally. Specifically, in an AlxGa(1-x)N/GaN superlattice structure, by modulation doping of Mg in the AlxGa(1-x)N barriers, high concentration of holes are ...
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A fundamental understanding of the mechanisms governing the behavior of defects and impurities is essential to control doping in semiconductors. Wide-band-gap semiconductors, in particular, often exhibit doping-related problems. We discuss how rst-principles theoretical techniques can be applied to the calculation of formation energies and concentrations of native defects and dopant impurities....
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We propose a codoping method of using acceptors and donors simultaneously as a solution to the crucial doping problem, or unipolarity, of wide-band-gap semiconductors which exhibit an asymmetry in their ability to be doped as n-type or p-type. The deliberate codoping of donors is essential for the enhancement of acceptor incorporation, decrease of the binding energy of the acceptor impurity and...
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ژورنال
عنوان ژورنال: Light: Science & Applications
سال: 2021
ISSN: 2047-7538
DOI: 10.1038/s41377-021-00503-y